List of top Electronics and Communication Engineering Questions

The minimum number of comparators required to build an eight-bit flash ADC is
The logic circuit shown in Figure below is a
logic circuit
The logic function implemented by the circuit shown in the Figure below is (ground implies a logic '0')
logic function implemented
The number of memory cycles required to execute the 8085 instruction LDA 3000 H is
Simplify the following expression with A, B, C three variables, \( F(A, B, C) = \Sigma(1, 3, 5, 7) \)
The POS form is suitable for circuits using
An amplifier has \( A_v = 1000 \pm 100 \). Determine the feedback needed to keep the gain within \( \pm 10\% \).
How to achieve 50\% duty cycle in adjustable rectangular wave generator? (Assume \( R_1 \) is Resistor connected between supply and discharge and \( R_2 \) is Resistor connected between discharge and trigger input.)
The decimal equivalent of \( (101111.1101)_2 \) is
Which of the following circuit is used as a special signal to demultiplex the address bus and data bus?
Which of the following statements are true?
P: JFET is biased to operate it in active region
Q: MOSFET is biased to operate it in saturation region
In the circuit shown in the following Figure, what is the output voltage (\( V_{out} \)) if a silicon transistor Q and an ideal op-amp are used?
output voltage (Vout) if a silicon transistor Q
In Wien's bridge oscillator, if \( R_1 = R_2 \) and \( C_1 = C_2 \), then the typical values of open loop gain and feedback factor to obtain the sustained oscillations are
If the input to a comparator is a sine wave, the output is
Three identical amplifiers with each one having a voltage gain of 50, input resistance of 1 kΩ and output resistance of 250 Ω are cascaded. The open circuit voltage gain of the combined amplifier is
In the silicon BJT circuit shown below, assume that emitter area of transistor Q1 is half that of transistor Q2, then what is the value of the current \( I_o \) is approximately
silicon BJT circuit
A negative going trigger pulse is applied to pin 2 of the IC 555 timer, passes through the threshold level of
For an N-channel enhancement-type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e., VSB>0), the threshold voltage \( V_{th} \) of the MOSFET will
Let R denote the responsivity of a PIN photodetector and \(\lambda\) is the wavelength. Figure of merit for the photo detector is quantum efficiency. The expression for quantum efficiency \(\mu\) is given by
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
The phenomenon known as "early effect" in a bipolar transistor refers to a reduction of the effective base width caused by
The DC current gain (\( \beta \)) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A circuit that uses an amplifier with passive filter elements is called as a(n)
The early effect in a bipolar junction transistor is caused by