Electrical conductivity \(\sigma = q(n\mu_n + p\mu_p)\).
For a pure (intrinsic) semiconductor, \(n=p=n_i\), which is small.
(a) Increasing mean lifetime: Would increase average carrier density, thus increasing conductivity. However, doping has a much larger effect.
(b) Increasing forbidden energy gap (\(E_g\)): Makes it harder to create electron-hole pairs, so it decreases intrinsic carrier concentration and conductivity.
(c) Adding some impurities into it (Doping): This is the most effective and standard method. It introduces a large number of majority carriers (either electrons for n-type or holes for p-type), significantly increasing conductivity.
(d) "Sharing conduction band": This is unclear and not a standard method to increase conductivity of a given semiconductor material.
The most effective and standard method is doping.
\[ \boxed{\text{Adding some impurities into it}} \]
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.