For an n-channel JFET, the condition for operation in the pinch-off (saturation) region is: \[ V_{DS} \ge V_{GS} - V_P \] The minimum value of \(V_{DS}\) for pinch-off is \(V_{DS(sat)} = V_{GS} - V_P\). Given: Gate-to-source voltage, \(V_{GS} = -2\text{V}\). Pinch-off voltage, \(V_P = -5\text{V}\). \(I_{DSS} = 8\text{mA}\) (This is the drain current when \(V_{GS}=0\) and the JFET is in pinch-off; it is not needed for this specific calculation). Minimum \(V_{DS}\) for pinch-off: \[ V_{DS(min)} = V_{GS} - V_P = (-2\text{V}) - (-5\text{V}) = -2\text{V} + 5\text{V} = 3\text{V} \] So, the JFET enters the pinch-off region when \(V_{DS}\) reaches 3V (for \(V_{GS}=-2V\)). \[ \boxed{3 \text{ V}} \]
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.