Consider a silicon p-n junction at $T = 300 \, \text{K}$ with doping concentrations of acceptor $N_A = 10^{16} \, \text{cm}^{-3}$ and donor $N_D = 10^{15} \, \text{cm}^{-3}$. Assume that intrinsic concentration $n_i = 1.5 \times 10^{10} \, \text{cm}^{-3}$, relative permittivity $= 11.7$, and $V_{bi} = 0.635 \, \text{V}$. The width of the space charge region in the p-n junction is: