The displacement current is related to the rate of change of electric flux density. It accounts for the current associated with the changing electric field in regions where there is no actual charge movement, like in a capacitor.
| LIST I | LIST II | ||
|---|---|---|---|
| A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
| B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
| C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
| D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
| LIST I | LIST II | ||
|---|---|---|---|
| A. | ∇ ⋅ E = ρ/ε₀ | I. Gauss's Law in magnetostatics | |
| B. | ∇ ⋅ B = 0 | II. Faraday's Law of electromagnetic Induction | |
| C. | ∇ × E = - ∂B/∂t | III. Gauss's Law in electrostatics | |
| D. | ∇ × B = μ₀J + μ₀ε₀ ∂E/∂t | IV. Modified Ampere's Law |