For an ideal PN junction, the depletion layer approximation assumes a sharp boundary, while the Maxwell-Boltzmann statistics applies to the carrier distribution. The low injection assumption simplifies the behavior of the junction under forward bias.
| LIST I | LIST II | ||
|---|---|---|---|
| A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
| B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
| C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
| D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
| LIST I | LIST II | ||
|---|---|---|---|
| A. | ∇ ⋅ E = ρ/ε₀ | I. Gauss's Law in magnetostatics | |
| B. | ∇ ⋅ B = 0 | II. Faraday's Law of electromagnetic Induction | |
| C. | ∇ × E = - ∂B/∂t | III. Gauss's Law in electrostatics | |
| D. | ∇ × B = μ₀J + μ₀ε₀ ∂E/∂t | IV. Modified Ampere's Law |