For an ideal PN junction, the depletion layer approximation assumes a sharp boundary, while the Maxwell-Boltzmann statistics applies to the carrier distribution. The low injection assumption simplifies the behavior of the junction under forward bias.
LIST I | LIST II | ||
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A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
LIST I | LIST II | ||
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A. | Bipolar npn transistor operate in the cut-off mode. | I. The base-emitter is reverse biased and | |
B. | Bipolar npn transistor operate in the saturation mode. | II. Both the base-emitter and base | |
C. | Bipolar npn transistor operate in the inverse active mode. | III. The base-emitter is forward biased | |
D. | Bipolar npn transistor operate in the forward active mode. | IV. Both the base-emitter and bas |