For an ideal PN junction, the depletion layer approximation assumes a sharp boundary, while the Maxwell-Boltzmann statistics applies to the carrier distribution. The low injection assumption simplifies the behavior of the junction under forward bias.
LIST I | LIST II | ||
---|---|---|---|
A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
LIST I | LIST II | ||
---|---|---|---|
A. | Bipolar npn transistor operate in the cut-off mode. | I. The base-emitter is reverse biased and | |
B. | Bipolar npn transistor operate in the saturation mode. | II. Both the base-emitter and base | |
C. | Bipolar npn transistor operate in the inverse active mode. | III. The base-emitter is forward biased | |
D. | Bipolar npn transistor operate in the forward active mode. | IV. Both the base-emitter and bas |
Europium (Eu) resembles Calcium (Ca) in the following ways:
(A). Both are diamagnetic
(B). Insolubility of their sulphates and carbonates in water
(C). Solubility of these metals in liquid NH3
(D). Insolubility of their dichlorides in strong HCI
Choose the correct answer from the options given below: