The width of the space charge region $W$ in a pn junction is given by the formula:
$W = \sqrt{\frac{2 \epsilon V_{bi}}{q} \left( \frac{1}{N_A} + \frac{1}{N_D} \right) }$
where $\epsilon$ is the permittivity, $V_{bi}$ is the built-in voltage, and $N_A$ and $N_D$ are the doping concentrations. Substituting the values:
$W \approx 9.51 \ \mu \text{m}$
LIST I | LIST II | ||
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A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
LIST I | LIST II | ||
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A. | Bipolar npn transistor operate in the cut-off mode. | I. The base-emitter is reverse biased and | |
B. | Bipolar npn transistor operate in the saturation mode. | II. Both the base-emitter and base | |
C. | Bipolar npn transistor operate in the inverse active mode. | III. The base-emitter is forward biased | |
D. | Bipolar npn transistor operate in the forward active mode. | IV. Both the base-emitter and bas |
LIST I | LIST II | ||
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A. | ∇ ⋅ E = ρ/ε₀ | I. Gauss's Law in magnetostatics | |
B. | ∇ ⋅ B = 0 | II. Faraday's Law of electromagnetic Induction | |
C. | ∇ × E = - ∂B/∂t | III. Gauss's Law in electrostatics | |
D. | ∇ × B = μ₀J + μ₀ε₀ ∂E/∂t | IV. Modified Ampere's Law |