LIST I | LIST II | ||
---|---|---|---|
A. | ∇ ⋅ E = ρ/ε₀ | I. Gauss's Law in magnetostatics | |
B. | ∇ ⋅ B = 0 | II. Faraday's Law of electromagnetic Induction | |
C. | ∇ × E = - ∂B/∂t | III. Gauss's Law in electrostatics | |
D. | ∇ × B = μ₀J + μ₀ε₀ ∂E/∂t | IV. Modified Ampere's Law |
\( \nabla \cdot \mathbf{E} = \frac{\rho}{\epsilon_0} \) is Gauss's Law in electrostatics (A).
\( \nabla \cdot \mathbf{B} = 0 \) is Gauss's Law in magnetostatics (B).
\( \nabla \times \mathbf{E} = -\frac{\partial \mathbf{B}}{\partial t} \) is Faraday's Law (C).
\( \nabla \times \mathbf{B} = \mu_0 \mathbf{J} + \mu_0 \epsilon_0 \frac{\partial \mathbf{E}}{\partial t} \) is the Modified Ampere's Law (D)
LIST I | LIST II | ||
---|---|---|---|
A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
LIST I | LIST II | ||
---|---|---|---|
A. | Bipolar npn transistor operate in the cut-off mode. | I. The base-emitter is reverse biased and | |
B. | Bipolar npn transistor operate in the saturation mode. | II. Both the base-emitter and base | |
C. | Bipolar npn transistor operate in the inverse active mode. | III. The base-emitter is forward biased | |
D. | Bipolar npn transistor operate in the forward active mode. | IV. Both the base-emitter and bas |