The relationship between the intensity \( I \) and the amplitude \( E_0 \) of the electric field for an electromagnetic wave is given by: \[ I = \frac{1}{2} \epsilon_0 c E_0^2 \] where \( \epsilon_0 = 8.854 \times 10^{-12} \, \text{C}^2/\text{N} \cdot \text{m}^2 \) is the permittivity of free space and \( c = 3 \times 10^8 \, \text{m/s} \) is the speed of light. Solving for \( E_0 \): \[ E_0 = \sqrt{\frac{2I}{\epsilon_0 c}} = \sqrt{\frac{2 \times 2.0}{8.854 \times 10^{-12} \times 3 \times 10^8}} \approx 388.8 \, \text{N/C}. \]
| LIST I | LIST II | ||
|---|---|---|---|
| A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
| B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
| C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
| D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
| LIST I | LIST II | ||
|---|---|---|---|
| A. | ∇ ⋅ E = ρ/ε₀ | I. Gauss's Law in magnetostatics | |
| B. | ∇ ⋅ B = 0 | II. Faraday's Law of electromagnetic Induction | |
| C. | ∇ × E = - ∂B/∂t | III. Gauss's Law in electrostatics | |
| D. | ∇ × B = μ₀J + μ₀ε₀ ∂E/∂t | IV. Modified Ampere's Law |