The relationship between the intensity \( I \) and the amplitude \( E_0 \) of the electric field for an electromagnetic wave is given by: \[ I = \frac{1}{2} \epsilon_0 c E_0^2 \] where \( \epsilon_0 = 8.854 \times 10^{-12} \, \text{C}^2/\text{N} \cdot \text{m}^2 \) is the permittivity of free space and \( c = 3 \times 10^8 \, \text{m/s} \) is the speed of light. Solving for \( E_0 \): \[ E_0 = \sqrt{\frac{2I}{\epsilon_0 c}} = \sqrt{\frac{2 \times 2.0}{8.854 \times 10^{-12} \times 3 \times 10^8}} \approx 388.8 \, \text{N/C}. \]
LIST I | LIST II | ||
---|---|---|---|
A. | Intrinsic semiconductor | I. Used as a rectifier circuit | |
B. | N-Type Semiconductor | II. Pure form of Semiconductor | |
C. | P-Type Semiconductor | III. Doping of pentavalent impurity in semiconductor | |
D. | P-N Junction diode | IV. Doping of trivalent impurity in semiconductor |
LIST I | LIST II | ||
---|---|---|---|
A. | Bipolar npn transistor operate in the cut-off mode. | I. The base-emitter is reverse biased and | |
B. | Bipolar npn transistor operate in the saturation mode. | II. Both the base-emitter and base | |
C. | Bipolar npn transistor operate in the inverse active mode. | III. The base-emitter is forward biased | |
D. | Bipolar npn transistor operate in the forward active mode. | IV. Both the base-emitter and bas |