4W
To solve this problem, we need to analyze the energy dissipation rate before and after the wire is cut.
Initial Energy Dissipation Rate: The power P dissipated by a resistor is given by:
\( P = \frac{V^2}{R} \),
where: - V is the voltage across the resistor, and R is the resistance.
Initially, with resistance R, the energy dissipation rate is:
\( W = P = \frac{V^2}{R} \).
After Cutting the Wire: When the wire is cut into two halves, each half has a resistance of:
\( R' = \frac{R}{2} \).
Connecting in Parallel: When these two halves are connected in parallel, the equivalent resistance Req is given by:
\( \frac{1}{R_{eq}} = \frac{1}{R'} + \frac{1}{R'} = \frac{2}{R/2} = \frac{4}{R} \).
Thus, the equivalent resistance is:
\( R_{eq} = \frac{R}{4} \).
New Energy Dissipation Rate: The new power P' dissipated in the circuit with the new resistance Req is:
\( P' = \frac{V^2}{R_{eq}} = \frac{V^2}{R/4} = \frac{4V^2}{R} \).
Comparing Power Dissipation Rates: Since \( W = \frac{V^2}{R} \) from the original circuit, we can relate the new power:
\( P' = 4W \).
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p–n junction diode
(D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: