Question:

When a potential difference V is applied across a wire of resistance R, it dissipates energy at a rate W. If the wire is cut into two halves and these halves are connected mutually parallel across the same supply, the same supply, the energy dissipation rate will become:

Updated On: Nov 16, 2024
  • $\frac{1}{4}W$
  • $\frac{1}{2}W$
  • 4W

  • 2W
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The Correct Option is C

Solution and Explanation

To solve this problem, we need to analyze the energy dissipation rate before and after the wire is cut.

Initial Energy Dissipation Rate: The power P dissipated by a resistor is given by:

\( P = \frac{V^2}{R} \),

where: - V is the voltage across the resistor, and R is the resistance.

Initially, with resistance R, the energy dissipation rate is:

\( W = P = \frac{V^2}{R} \).

After Cutting the Wire: When the wire is cut into two halves, each half has a resistance of:

\( R' = \frac{R}{2} \).

Connecting in Parallel: When these two halves are connected in parallel, the equivalent resistance Req is given by:

\( \frac{1}{R_{eq}} = \frac{1}{R'} + \frac{1}{R'} = \frac{2}{R/2} = \frac{4}{R} \).

Thus, the equivalent resistance is:

\( R_{eq} = \frac{R}{4} \).

New Energy Dissipation Rate: The new power P' dissipated in the circuit with the new resistance Req is:

\( P' = \frac{V^2}{R_{eq}} = \frac{V^2}{R/4} = \frac{4V^2}{R} \).

Comparing Power Dissipation Rates: Since \( W = \frac{V^2}{R} \) from the original circuit, we can relate the new power:

\( P' = 4W \).

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Concepts Used:

P-n Junction

A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.

Biasing conditions for the p-n Junction Diode:

in p-n junction diode two operating regions are there:

  • P-type
  • N-type

There are three biasing conditions for p-n junction diode are as follows:

  • Zero bias: When there is no external voltage applied to the p-n junction diode.
  • Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
  • Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.