4W
To solve this problem, we need to analyze the energy dissipation rate before and after the wire is cut.
Initial Energy Dissipation Rate: The power P dissipated by a resistor is given by:
\( P = \frac{V^2}{R} \),
where: - V is the voltage across the resistor, and R is the resistance.
Initially, with resistance R, the energy dissipation rate is:
\( W = P = \frac{V^2}{R} \).
After Cutting the Wire: When the wire is cut into two halves, each half has a resistance of:
\( R' = \frac{R}{2} \).
Connecting in Parallel: When these two halves are connected in parallel, the equivalent resistance Req is given by:
\( \frac{1}{R_{eq}} = \frac{1}{R'} + \frac{1}{R'} = \frac{2}{R/2} = \frac{4}{R} \).
Thus, the equivalent resistance is:
\( R_{eq} = \frac{R}{4} \).
New Energy Dissipation Rate: The new power P' dissipated in the circuit with the new resistance Req is:
\( P' = \frac{V^2}{R_{eq}} = \frac{V^2}{R/4} = \frac{4V^2}{R} \).
Comparing Power Dissipation Rates: Since \( W = \frac{V^2}{R} \) from the original circuit, we can relate the new power:
\( P' = 4W \).
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: