Step 1: Analyze Statement A
For a solar cell, the I − V characteristics lie in the fourth quadrant because it operates by converting light energy into electrical energy, generating current in the process. This makes Statement A correct.
Step 2: Analyze Statement B
In a reverse-biased pn-junction diode, the current (leakage current) is due to minority carriers, not majority carriers. Hence, Statement B is incorrect.
Step 3: Conclusion
Statement A is correct, but Statement B is incorrect.
The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.
Which of the following is correct?
A sphere of radius R is cut from a larger solid sphere of radius 2R as shown in the figure. The ratio of the moment of inertia of the smaller sphere to that of the rest part of the sphere about the Y-axis is :
A constant voltage of 50 V is maintained between the points A and B of the circuit shown in the figure. The current through the branch CD of the circuit is :