Step 1: Analyze Statement A
For a solar cell, the I − V characteristics lie in the fourth quadrant because it operates by converting light energy into electrical energy, generating current in the process. This makes Statement A correct.
Step 2: Analyze Statement B
In a reverse-biased pn-junction diode, the current (leakage current) is due to minority carriers, not majority carriers. Hence, Statement B is incorrect.
Step 3: Conclusion
Statement A is correct, but Statement B is incorrect.
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : The potential (V) at any axial point, at 2 m distance(r) from the centre of the dipole of dipole moment vector
\(\vec{P}\) of magnitude, 4 × 10-6 C m, is ± 9 × 103 V.
(Take \(\frac{1}{4\pi\epsilon_0}=9\times10^9\) SI units)
Reason R : \(V=±\frac{2P}{4\pi \epsilon_0r^2}\), where r is the distance of any axial point, situated at 2 m from the centre of the dipole.
In the light of the above statements, choose the correct answer from the options given below :
The output (Y) of the given logic gate is similar to the output of an/a :