List of top Electronics and Communication Engineering Questions asked in GATE Electronics and Communication Engineering

For the circuit shown below, the propagation delay of each NAND gate is 1 ns. The critical path delay, in ns, is ___________ (rounded off to the nearest integer). 

For the two port network shown below, the [Y]-parameters is given as [Y] = (1/100) * [[2 -1], [-1 4/3]] S. The value of load impedance Z_L, in ohms, for maximum power transfer will be _____________ (rounded off to the nearest integer).

In the circuit shown below, the current $i$ flowing through $200\,\Omega$ resistor is ________ mA (rounded off to two decimal places).

In the table shown below, match the signal type with its spectral characteristics.

\[ \begin{array}{|l|l|} \hline \text{Signal type} & \text{Spectral characteristics} \\ \hline (i) \; \text{Continuous, aperiodic} & (a) \; \text{Continuous, aperiodic} \\ \hline (ii) \; \text{Continuous, periodic} & (b) \; \text{Continuous, periodic} \\ \hline (iii) \; \text{Discrete, aperiodic} & (c) \; \text{Discrete, aperiodic} \\ \hline (iv) \; \text{Discrete, periodic} & (d) \; \text{Discrete, periodic} \\ \hline \end{array} \]
The Fourier transform \(X(\omega)\) of \(x(t)=e^{-t^{2}}\) is \[ X(\omega)=\sqrt{\pi}\,e^{-\tfrac{\omega^{2}}{4}}. \]
Consider a system with input x(t) and output y(t) = x(e^t). The system is
Let $m(t)$ be a strictly band-limited signal with bandwidth $B$ and energy $E$. Assuming $\omega_0=10B$, the energy in the signal $m(t)\cos \omega_0 t$ is

The synchronous sequential circuit shown below works at a clock frequency of 1 GHz. The throughput, in Mbits/s, and the latency, in ns, respectively, are 

In the circuit shown below, P and Q are the inputs. The logical function realized by the circuit shown below is

In the circuit shown below, $V_1$ and $V_2$ are bias voltages. Based on input and output impedances, the circuit behaves as a

For a MOS capacitor, $V_{fb}$ and $V_t$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($W_{\text{dep}}$) for varying gate voltage ($V_g$) is best represented by

A transparent dielectric coating is applied to glass $(\varepsilon_r=4,\ \mu_r=1)$ to eliminate the reflection of red light $(\lambda_0=0.75~\mu\text{m})$. The minimum thickness of the dielectric coating, in $\mu$m, that can be used is __________ (rounded off to two decimal places).}
Let an input $x[n]$ having discrete-time Fourier transform \[ X(e^{j\Omega}) = 1 - e^{-j\Omega} + 2e^{-j3\Omega} \] be passed through an LTI system whose frequency response is \[ H(e^{j\Omega}) = 1 - \tfrac12 e^{-j2\Omega}. \] The output $y[n]$ of the system is
The signal-to-noise ratio (SNR) of an ADC with a full-scale sinusoidal input is given to be 61.96 dB. The resolution of the ADC is ______ bits (rounded off to the nearest integer).
For a real signal, which of the following is/are valid power spectral density/densities?
The open loop transfer function of a unity negative feedback system is \[ G(s) = \frac{k}{s(1+sT_1)(1+sT_2)}, \] where $k$, $T_1$ and $T_2$ are positive constants. The phase cross-over frequency, in rad/s, is
A cascade of common-source amplifiers in a unity gain feedback configuration oscillates when
Consider a narrow band signal, propagating in a lossless dielectric medium $(\varepsilon_r = 4, \mu_r = 1)$, with phase velocity $v_p$ and group velocity $v_g$. Which of the following statement is true? ($c$ is the velocity of light in vacuum.)
For an intrinsic semiconductor at temperature $T=0K$, which of the following statement is true?
A series RLC circuit has a quality factor $Q$ of 1000 at a center frequency of $10^{6}$ rad/s. The possible values of $R$, $L$ and $C$ are
In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as