List of practice Questions

Simplify the following expression with A, B, C three variables, \( F(A, B, C) = \Sigma(1, 3, 5, 7) \)
The number of memory cycles required to execute the 8085 instruction LDA 3000 H is
The POS form is suitable for circuits using
The decimal equivalent of \( (101111.1101)_2 \) is
Which of the following circuit is used as a special signal to demultiplex the address bus and data bus?
How to achieve 50\% duty cycle in adjustable rectangular wave generator? (Assume \( R_1 \) is Resistor connected between supply and discharge and \( R_2 \) is Resistor connected between discharge and trigger input.)
In the silicon BJT circuit shown below, assume that emitter area of transistor Q1 is half that of transistor Q2, then what is the value of the current \( I_o \) is approximately
silicon BJT circuit
Three identical amplifiers with each one having a voltage gain of 50, input resistance of 1 kΩ and output resistance of 250 Ω are cascaded. The open circuit voltage gain of the combined amplifier is
A negative going trigger pulse is applied to pin 2 of the IC 555 timer, passes through the threshold level of
In Wien's bridge oscillator, if \( R_1 = R_2 \) and \( C_1 = C_2 \), then the typical values of open loop gain and feedback factor to obtain the sustained oscillations are
If the input to a comparator is a sine wave, the output is
In the circuit shown in the following Figure, what is the output voltage (\( V_{out} \)) if a silicon transistor Q and an ideal op-amp are used?
output voltage (Vout) if a silicon transistor Q
Which of the following statements are true?
P: JFET is biased to operate it in active region
Q: MOSFET is biased to operate it in saturation region
For an N-channel enhancement-type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e., VSB>0), the threshold voltage \( V_{th} \) of the MOSFET will
The phenomenon known as "early effect" in a bipolar transistor refers to a reduction of the effective base width caused by
A circuit that uses an amplifier with passive filter elements is called as a(n)
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
The DC current gain (\( \beta \)) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
Let R denote the responsivity of a PIN photodetector and \(\lambda\) is the wavelength. Figure of merit for the photo detector is quantum efficiency. The expression for quantum efficiency \(\mu\) is given by
The early effect in a bipolar junction transistor is caused by
Match items in Group-I with items in Group-II, most suitably.
Spontaneous emission
A silicon PN junction diode is forward biased with a constant current at room temperature carrying a constant current of 1 mA. When the temperature is increased by 10°C, the forward bias voltage across the PN junction is approximately equal to
The direction of the diffusion current depends on
How does a FET behave when the V-I characteristics are to the left of pinch off for an n-channel FET?