\(i_s=\frac {60}{4×10^3}\)
\(i_s=15×10^{−3}\)
\(i_s=15\ mA\)
\(i_L=\frac {60}{10×10^3}\)
\(i_L=6\ mA\)
The maximum Zener diode current,
\(I_z=i_s–i_L\)
\(I_z = 15 mA - 6 mA\)
\(I_z=9 mA\)
So, the answer is \(9\ mA\).
The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.
Which of the following is correct?
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
Considering the principal values of the inverse trigonometric functions, $\sin^{-1} \left( \frac{\sqrt{3}}{2} x + \frac{1}{2} \sqrt{1-x^2} \right)$, $-\frac{1}{2}<x<\frac{1}{\sqrt{2}}$, is equal to
Consider two vectors $\vec{u} = 3\hat{i} - \hat{j}$ and $\vec{v} = 2\hat{i} + \hat{j} - \lambda \hat{k}$, $\lambda>0$. The angle between them is given by $\cos^{-1} \left( \frac{\sqrt{5}}{2\sqrt{7}} \right)$. Let $\vec{v} = \vec{v}_1 + \vec{v}_2$, where $\vec{v}_1$ is parallel to $\vec{u}$ and $\vec{v}_2$ is perpendicular to $\vec{u}$. Then the value $|\vec{v}_1|^2 + |\vec{v}_2|^2$ is equal to
The value of $\int_{-1}^{1} \frac{(1 + \sqrt{|x| - x})e^x + (\sqrt{|x| - x})e^{-x}}{e^x + e^{-x}} \, dx$ is equal to
The length of the latus-rectum of the ellipse, whose foci are $(2, 5)$ and $(2, -3)$ and eccentricity is $\frac{4}{5}$, is
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: