

\(i_s=\frac {60}{4×10^3}\)
\(i_s=15×10^{−3}\)
\(i_s=15\ mA\)
\(i_L=\frac {60}{10×10^3}\)
\(i_L=6\ mA\)
The maximum Zener diode current,
\(I_z=i_s–i_L\)
\(I_z = 15 mA - 6 mA\)
\(I_z=9 mA\)
So, the answer is \(9\ mA\).

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode. 
Which of the following is correct?
Let \( \alpha = \dfrac{-1 + i\sqrt{3}}{2} \) and \( \beta = \dfrac{-1 - i\sqrt{3}}{2} \), where \( i = \sqrt{-1} \). If
\[ (7 - 7\alpha + 9\beta)^{20} + (9 + 7\alpha - 7\beta)^{20} + (-7 + 9\alpha + 7\beta)^{20} + (14 + 7\alpha + 7\beta)^{20} = m^{10}, \] then the value of \( m \) is ___________.
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: