List of top Questions asked in Andhra Pradesh Post Graduate Engineering Common Entrance Test

Which of the following statements are true?
P: JFET is biased to operate it in active region
Q: MOSFET is biased to operate it in saturation region
In the circuit shown in the following Figure, what is the output voltage (\( V_{out} \)) if a silicon transistor Q and an ideal op-amp are used?
output voltage (Vout) if a silicon transistor Q
In Wien's bridge oscillator, if \( R_1 = R_2 \) and \( C_1 = C_2 \), then the typical values of open loop gain and feedback factor to obtain the sustained oscillations are
A negative going trigger pulse is applied to pin 2 of the IC 555 timer, passes through the threshold level of
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
Let R denote the responsivity of a PIN photodetector and \(\lambda\) is the wavelength. Figure of merit for the photo detector is quantum efficiency. The expression for quantum efficiency \(\mu\) is given by
For an N-channel enhancement-type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e., VSB>0), the threshold voltage \( V_{th} \) of the MOSFET will
The phenomenon known as "early effect" in a bipolar transistor refers to a reduction of the effective base width caused by
The DC current gain (\( \beta \)) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
A circuit that uses an amplifier with passive filter elements is called as a(n)
The early effect in a bipolar junction transistor is caused by
How does a FET behave when the V-I characteristics are to the left of pinch off for an n-channel FET?
The direction of the diffusion current depends on
Match items in Group-I with items in Group-II, most suitably.
Spontaneous emission
A silicon PN junction diode is forward biased with a constant current at room temperature carrying a constant current of 1 mA. When the temperature is increased by 10°C, the forward bias voltage across the PN junction is approximately equal to
In superposition theorem, when we consider the effect of one voltage source, all the other current sources are
The current through a series RL circuit is \( \frac{1}{4} e^{-\frac{3}{4} t} \) when excited by a unit impulse voltage. The values of R and L are respectively
If \( E_p \) (Fermi energy level) \(>E_f \) (intrinsic Fermi energy level), then the type of semiconductor is
Which process of the Electron-hole pair is responsible for emitting of light?
In MOSFET fabrication, the channel length is defined during the process of
The mesh current method
(I) Works with both planar and non-planar circuits
(II) Uses Kirchhoff’s voltage law
Which of the above is correct?
If there are 5 branches and 4 nodes in the graph, then the number of mesh equations that can be formed are?
The current waveform \(i(t)\) in a pure resistor of 20 \( \Omega \) is as shown in the figure below, then the power dissipated in the resistor is
waveform i(t) in a pure resistor of 20 Ω
In the following figure, \(C_1\) and \(C_2\) are ideal capacitors. \(C_1\) has been charged to 12V before the ideal switch \(S\) is closed at \(t = 0\). The current \(i(t)\) for all \(t\) is
C1 and C2 are ideal capacitors. C1