Question

If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is

• A. P - Q - R - S
• B. Q - S - R - P
• C. R - P - S - Q
• D. S - R - Q - P

Hint:

In CMOS fabrication, follow the general order: Well implantation, source/drain diffusion, metallization, and finally passivation.

Answer 1

The Correct Option is B

In a standard n-well CMOS fabrication process, the typical sequence is: 1. **Q (n-well implant)**: The creation of the n-well is one of the first steps. 2. **S (source/drain diffusion)**: This follows after the well implantation to create the source and drain regions. 3. **R (metallization)**: This involves adding metal layers after the diffusion steps. 4. **P (passivation)**: Finally, passivation is added to protect the surface of the device. Thus, the correct order is option (2).