Question

Which of the following statements is NOT correct:

• A. Pure silicon doped with a trivalent impurity gives a p-type semiconductor.
• B. Majority carriers in an n-type semiconductor are holes.
• C. Minority carriers in a p-type semiconductor are electrons.
• D. The resistivity of an intrinsic semiconductor decreases with increase of temperature.

Hint:

For semiconductors, remember that resistivity decreases with temperature due to the increased movement of charge carriers in the material.

Answer 1

The Correct Option is D

- Statement 1: Pure silicon doped with a trivalent impurity (such as boron) results in a p-type semiconductor, which has more holes as majority carriers. This statement is correct.
- Statement 2: In an n-type semiconductor, the majority carriers are electrons, not holes. This statement is also correct.
- Statement 3: In a p-type semiconductor, the majority carriers are holes, and the minority carriers are electrons. Therefore, this statement is correct.
- Statement 4: The resistivity of an intrinsic semiconductor decreases with an increase in temperature, which is incorrect. In intrinsic semiconductors, resistivity decreases as temperature increases due to an increase in charge carriers, making this statement the incorrect one.