List of top Electronic Devices Questions

The intrinsic carrier concentration of a semiconductor is \( 2.5 \times 10^{16} \, /m^3 \) at 300 K. If the electron and hole mobilities are \( 0.15 \, {m}^2/{Vs} \) and \( 0.05 \, {m}^2/{Vs} \), respectively, then the intrinsic resistivity of the semiconductor (in \( k\Omega \cdot m \)) at 300 K is _________. (Charge of an electron \( e = 1.6 \times 10^{-19} \, C \))

Match List I with List II

List I (Technology)		List II (Range)
A	Bluetooth	I	10 cm to 200 m
B	LoRa	II	10 m to 20 m
C	RFID	III	1 m to 100 m
D	ZigBee	IV	2 km to 15 km

Choose the correct answer from the options given below:

Which statements are true?
A. Electric field,  $\xi (x)$, in a semiconductor is directly proportional to the slope of the intrinsic Fermi level. 
B. Continuity equation is a mathematical representation of Fermi-Dirac distribution function. 
C. Depletion width in a P-N junction is equal to its Debye length. 
D. Diffusion current density for holes is equal to $[-qD_{\rho}, \frac{dp(x)}{d(x)} ]$
Choose the correct answer from the options given below.

Match List I with List II

List I  (Circuits)		List II (Components)
A	In an ideal op-amp integrator	I	A parallel RLC network in the feedback path
B	In an ideal op-amp differentiator	II	An E-MOSFET is used that work as switch
C	In an op-amp sample and hold circuit	III	A capacitor is in feedback path
D	In an op-amp peaking amplifier	IV	A resistor is in feedback path

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Which statement(s) is/are true?
A. The drain current in an enhancement-type MOSFET is inversely proportional to the relative permittivity of the gate oxide. 
B. The threshold voltage in an MOS capacitor does not depend on the gate oxide thickness. 
C. The drain current in an enhancement-type MOSFET is directly proportional to the relative permittivity of the gate oxide. 
D. The threshold voltage in an MOS capacitor depends on the gate oxide thickness.
Choose the correct answer from the options given below.

Given below are two statements:
Statement-I: Velocity saturation in silicon occurs at high electric fields. 
Statement-II : Mobilities due to two scattering mechanisms (μ and μ2) add up inversely as $ \frac1{μ}  =\frac1{μ_1} +\frac1{μ_2} $ 
In the light of the above statements, choose the correct answer from the options given below.

Given below are two statements :
Statement-I: The $r_e$ model has advantage that the parameters are defined by the actual operating conditions. 
Statement-II: The parameters of the hybrid equivalent circuit are defined in general terms for any operating conditions. 
In the light of the above statements, choose the correct answer from the options given below.

An evanescent mode occurs when

A polar diagram, which represents a lag network, is

In a silicon sample doped with N-type impurities, the Fermi level $(E_F)$ is situated 0.35 eV away from the intrinsic Fermi level $(E_i)$. If the energy bandgap $(E_g)$ of silicon at 300 K is considered to be 1.10 eV, what is the separation between the Fermi level $(E_F)$ and the valence band edge $(E_v)$?

In which quadrant of the current-voltage characteristic does a solar cell operate?

Maximum electric field in a P-N junction in equilibrium is located

The conduction band edge, $E_c$, in a semiconductor represents

The value of solar constant is.

The relationship among the emitter capacitance (Ce), the diffusion capacitance (C_De) and the transition capacitance (C_Te) cs given by:

The statements which are correct with referred to solar cell are:
A. The short circuit current of a solar cell changes logarithmically with radiation
B. At maximum power point of the solar cell the product of voltage and current are maximum
C. Energy pay back period of a single crystal silicone cell is 10 to 20 years
D. At maximum power point of the solar cell both voltage and current are maximum
E. Energy pay back period of a single crystal silicon cell is 1 to 3 years
Choose the correct answer from the options given below: