Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.
200 ml of an aqueous solution contains 3.6 g of Glucose and 1.2 g of Urea maintained at a temperature equal to 27$^{\circ}$C. What is the Osmotic pressure of the solution in atmosphere units?
Given Data R = 0.082 L atm K$^{-1}$ mol$^{-1}$
Molecular Formula: Glucose = C$_6$H$_{12}$O$_6$, Urea = NH$_2$CONH$_2$