The slope of plate characteristic and mutual characteristic curves of a triode valve is $0.02\, mA / V$ and $1 \,mA / V$. The amplification factor of triode valve is:
- $ 2\times 10^{8} $
- $ 20 $
- $ 50 $
- $ 40 $
The Correct Option is C
Solution and Explanation
Top Questions on P-N Junction
- Consider the following statements A and B and identify the correct answer:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to majority charge carriers.- NEET (UG) - 2024
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- When a potential difference V is applied across a wire of resistance R, it dissipates energy at a rate W. If the wire is cut into two halves and these halves are connected mutually parallel across the same supply, the same supply, the energy dissipation rate will become:
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- Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below- JEE Main - 2023
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- P-N Junction
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
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- Find the change in the charge carriers of a p-n junction diode if its temperature is increased?
- MHT CET - 2023
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.