In a semiconductor, conductivity is given by: \[ \sigma = n e \tau \] Where: - \( n \) is the number density of free charge carriers, - \( e \) is the charge of the electron, - \( \tau \) is the relaxation time. As the temperature increases, the number density of free carriers \( n \) increases due to the increased excitation of electrons from the valence band to the conduction band.
However, the relaxation time \( \tau \) typically decreases as temperature increases because higher temperatures cause more collisions of charge carriers, leading to more scattering. The net effect is that the increase in number density dominates, causing an overall increase in conductivity.
Thus, the correct answer is that the relaxation time increases with temperature, but the increase in number density is the primary reason for the increase in conductivity.
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.
A solid cylinder of mass 2 kg and radius 0.2 m is rotating about its own axis without friction with angular velocity 5 rad/s. A particle of mass 1 kg moving with a velocity of 5 m/s strikes the cylinder and sticks to it as shown in figure.
The angular velocity of the system after the particle sticks to it will be: