In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p–n junction diode
(D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?
In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p–n junction diode
(D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?
The Correct Option is A
Solution and Explanation
Till |V|≤0.6 V
|V0|=|V|
So, correct graph is D.
Top Questions on P-N Junction
- Consider the following statements A and B and identify the correct answer:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to majority charge carriers.- NEET (UG) - 2024
- Physics
- P-N Junction
- When a potential difference V is applied across a wire of resistance R, it dissipates energy at a rate W. If the wire is cut into two halves and these halves are connected mutually parallel across the same supply, the same supply, the energy dissipation rate will become:
- JEE Main - 2024
- Physics
- P-N Junction
- Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below- JEE Main - 2023
- Physics
- P-N Junction
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
- JEE Main - 2023
- Physics
- P-N Junction
- Find the change in the charge carriers of a p-n junction diode if its temperature is increased?
- MHT CET - 2023
- Physics
- P-N Junction
Questions Asked in JEE Main exam
The portion of the line \( 4x + 5y = 20 \) in the first quadrant is trisected by the lines \( L_1 \) and \( L_2 \) passing through the origin. The tangent of an angle between the lines \( L_1 \) and \( L_2 \) is:
- JEE Main - 2024
- Tangents and Normals
- Let \[ \vec{a} = 2\hat{i} + \alpha \hat{j} + \hat{k}, \quad \vec{b} = -\hat{i} + \hat{k}, \quad \vec{c} = \beta \hat{j} - \hat{k}, \] where \( \alpha \) and \( \beta \) are integers and \( \alpha \beta = -6 \). Let the values of the ordered pair \( (\alpha, \beta) \) for which the area of the parallelogram of diagonals \( \vec{a} + \vec{b} \) and \( \vec{b} + \vec{c} \) is \( \frac{\sqrt{21}}{2} \), be \( (\alpha_1, \beta_1) \) and \( (\alpha_2, \beta_2) \). Then \( \alpha_1^2 + \beta_1^2 - \alpha_2 \beta_2 \) is equal to:
- JEE Main - 2024
- Vectors
- The molecular formula of second homologue in the homologous series of monocarboxylic acid is
- JEE Main - 2024
- Aldehydes, Ketones and Carboxylic Acids
- Given below are two statements: Statement I: $\text{PF}_5$ and $\text{BrF}_5$ both exhibit $\text{sp}^3\text{d}$ hybridisation.Statement II: Both $\text{SF}_6$ and $[\text{Co}(\text{NH}_3)_6]^{3+}$ exhibit $\text{sp}^3\text{d}^2$ hybridisation. In the light of the above statements,choose the correct answer from the options given below:
- JEE Main - 2024
- Hybridisation
- Consider the system of linear equations \( x + y + z = 4\mu \), \( x + 2y + 2\lambda z = 10\mu \), \( x + 3y + 4\lambda^2 z = \mu^2 + 15 \), where \( \lambda, \mu \in \mathbb{R} \). Which one of the following statements is NOT correct?
- JEE Main - 2024
- Linear Algebra
Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.