Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.
Which of the following is correct?
Let $ P_n = \alpha^n + \beta^n $, $ n \in \mathbb{N} $. If $ P_{10} = 123,\ P_9 = 76,\ P_8 = 47 $ and $ P_1 = 1 $, then the quadratic equation having roots $ \alpha $ and $ \frac{1}{\beta} $ is:
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: