Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode. 
Which of the following is correct?
A metallic ring is uniformly charged as shown in the figure. AC and BD are two mutually perpendicular diameters. Electric field due to arc AB to O is ‘E’ magnitude. What would be the magnitude of electric field at ‘O’ due to arc ABC? 
Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R).
Assertion (A): Net dipole moment of a polar linear isotropic dielectric substance is not zero even in the absence of an external electric field. Reason
(R): In absence of an external electric field, the different permanent dipoles of a polar dielectric substance are oriented in random directions.
In the light of the above statements, choose the most appropriate answer from the options given below:
Two large plane parallel conducting plates are kept 10 cm apart as shown in figure. The potential difference between them is $ V $. The potential difference between the points A and B (shown in the figure) is: 
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: