Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode. 
Which of the following is correct?
Match the LIST-I with LIST-II for an isothermal process of an ideal gas system. 
Choose the correct answer from the options given below:
Which one of the following graphs accurately represents the plot of partial pressure of CS₂ vs its mole fraction in a mixture of acetone and CS₂ at constant temperature?

A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
in p-n junction diode two operating regions are there:
There are three biasing conditions for p-n junction diode are as follows: