List of top Nanoelectronics Questions asked in Common University Entrance Test

Match List-I with List-II:

List-I (Counters) List-II (Delay/Number of States)
(A) n-bit ring counter(I) Number of states is \( 2^n \)
(B) MOD-\(2^n\) asynchronous counter(II) Fastest counter
(C) n-bit Johnson counter(III) Number of used states is \( n \)
(D) Synchronous counter(IV) Number of used states is \( 2n \)

Choose the correct answer from the options given below:

Match List-I with List-II:

List-I (Modulation Schemes) List-II (Wave Expressions)
(A) Amplitude Modulation(I) \( x(t) = A\cos(\omega_c t + k m(t)) \)
(B) Phase Modulation(II) \( x(t) = A\cos(\omega_c t + k \int m(t)dt) \)
(C) Frequency Modulation(III) \( x(t) = A + m(t)\cos(\omega_c t) \)
(D) DSB-SC Modulation(IV) \( x(t) = m(t)\cos(\omega_c t) \)

Choose the correct answer:

Match List-I with List-II:

List-I (Amplifiers)List-II (Characteristics)
(A) CE Amplifier(I) Current buffer circuit
(B) CB Amplifier(II) Voltage buffer circuit
(C) CC Amplifier(III) High current gain
(D) Darlington Amplifier(IV) High power gain

Choose the correct answer:

Match List-I with List-II:

List-I (Effects)List-II (Electronic Devices)
(A) Channel length modulation(I) Zener diode
(B) Channel width modulation(II) BJTs
(C) Early effect(III) JFETs
(D) Tunneling effect(IV) MOSFETs

Choose the correct answer:

Match List-I with List-II:
 

List-I (Electric field)  List-II (Mobility)
(A) Low electric field(I) Mobility decreases by \( \frac{1}{E} \)
(B) Medium electric field(II) Mobility decreases by \( \frac{1}{\sqrt{E}} \)
(C) High electric field(III) Mobility remains constant

Choose the correct answer:

Match List-I with List-II
 

List-I List-II 
(A) Faraday’s Law(ii) \( \vec{\nabla} \times \vec{E} = -\frac{\partial \vec{B}}{\partial t} \)
(B) Conservation Law(iii) \( \vec{\nabla} \times \vec{A} = 0 \)
(C) Ohm’s Law(iv) \( \vec{J} = \sigma \vec{E} \)
(D) Gauss’s Law(i) \( \frac{\rho}{\epsilon_0} \)

Match List-I with List-II

Quantum Structure Delocalization Dimensions
(A) Quantum wells(I) 1 
(B) Quantum wires(II) 2
(C) Quantum dots(III) 3
(D) Bulk conductors(IV) 0

Match List-I with List-II

List-I (Instructions)List-II (Addressing Mode)
(A) LDA 2100 H(I) Immediate 
(B) RAL(II) Register
(C) ADD C(III) Direct
(D) ANI 08 H (IV) Implied

Match List-I with List-II

List-I (Data Bus Status Output)List-II (Status Signals)
(A) Memory read  (I) 0, 1, 1
(B) Op-code fetch(II) 0, 1, 0
(C) INTR acknowledge(III) 0, 0, 1
(D) Memory write(IV) 1, 1, 1
In GaAsP, if $E_g = 1.9 \, \text{eV}$, the emission wavelength is:
The DC collector current for a BJT with $\alpha = 0.99$, $I_B = 25 \, \mu A$ and $I_{CBO} = 200 \, nA$ is:
Which of the following statements is incorrect about Light-addressable potentiometric sensors (LAPS)?
.......... type of electrochemical detection measures the electric current associated with the electron transfer involved in redox processes whereas ............ type of electrochemical detection measures conductance or capacitance changes associated with changes in the overall ionic medium between the two electrodes.
In the ISFET pH measurement system, the voltage circuit has ........ impedance and the current circuit has ......... impedance.
The process of transferring growth species from a source or target and depositing them on a substrate to form a film is called:
........... are electromagnetic radiation with typical photon energies in the range of 100 eV to 100 keV:
Match List-I with List-II
Choose the correct answer from the options below:
The measurement of Nitric Oxide (NO) is quite difficult due to its ........ half-life and ........ reactivity with other biological components such as superoxide, oxygen, thiols.
Quantum well lasers were first fabricated using the ............ material systems.
Measurement of grain size by using X-ray diffraction line broadening can be done by:
In X-ray diffraction, a collimated beam of X-rays, with most appropriate wavelength ranging from .......... is incident on a specimen and is diffracted by the crystalline phases of the specimen:
Major problems with the large-scale utilization of carbon nanotubes
(A) synthesis in pure forms
(B) dispersion in solvents
(C) reducing their length
(D) tailoring into a desired orientation
The process of synthesizing large polymer molecules is:
The number of cubes of each side 1 nm and the collective surface area that can be carved out from a cube with each side of 1 m are respectively:
The process of transferring a pattern into a reactive polymer film which will subsequently be used to replicate that pattern into an underlying thin film is called: