Match List-I with List-II
List-I (Data Bus Status Output) | List-II (Status Signals) |
---|---|
(A) Memory read | (I) 0, 1, 1 |
(B) Op-code fetch | (II) 0, 1, 0 |
(C) INTR acknowledge | (III) 0, 0, 1 |
(D) Memory write | (IV) 1, 1, 1 |
Match List-I with List-II:
List-I (Amplifiers) | List-II (Characteristics) |
---|---|
(A) CE Amplifier | (I) Current buffer circuit |
(B) CB Amplifier | (II) Voltage buffer circuit |
(C) CC Amplifier | (III) High current gain |
(D) Darlington Amplifier | (IV) High power gain |
Choose the correct answer:
Match List-I with List-II:
List-I (Effects) | List-II (Electronic Devices) |
---|---|
(A) Channel length modulation | (I) Zener diode |
(B) Channel width modulation | (II) BJTs |
(C) Early effect | (III) JFETs |
(D) Tunneling effect | (IV) MOSFETs |
Choose the correct answer:
Match List-I with List-II
List-I (Instructions) | List-II (Addressing Mode) |
---|---|
(A) LDA 2100 H | (I) Immediate |
(B) RAL | (II) Register |
(C) ADD C | (III) Direct |
(D) ANI 08 H | (IV) Implied |
At room temperature, the energy band gap of different materials have been listed in the table below. Correctly match the energy band gap (List-I) with the corresponding material (List-II).
LIST-I (Energy band gap) | LIST-II (Material) |
---|---|
A. \( E_g = 0.67 \) eV | I. Polymer |
B. \( E_g = 1.1 \) eV | II. Germanium |
C. \( E_g = 1.43 \) eV | III. Silicon |
D. \( E_g > 5 \) eV | IV. Gallium Arsenide |
Signals and their Fourier Transforms are given in the table below. Match LIST-I with LIST-II and choose the correct answer.
LIST-I | LIST-II |
---|---|
A. \( e^{-at}u(t), a>0 \) | I. \( \pi[\delta(\omega - \omega_0) + \delta(\omega + \omega_0)] \) |
B. \( \cos \omega_0 t \) | II. \( \frac{1}{j\omega + a} \) |
C. \( \sin \omega_0 t \) | III. \( \frac{1}{(j\omega + a)^2} \) |
D. \( te^{-at}u(t), a>0 \) | IV. \( -j\pi[\delta(\omega - \omega_0) - \delta(\omega + \omega_0)] \) |
Match List-I with List-II:
List-I (Counters) | List-II (Delay/Number of States) |
---|---|
(A) n-bit ring counter | (I) Number of states is \( 2^n \) |
(B) MOD-\(2^n\) asynchronous counter | (II) Fastest counter |
(C) n-bit Johnson counter | (III) Number of used states is \( n \) |
(D) Synchronous counter | (IV) Number of used states is \( 2n \) |
Choose the correct answer from the options given below:
Match List-I with List-II:
List-I (Modulation Schemes) | List-II (Wave Expressions) |
---|---|
(A) Amplitude Modulation | (I) \( x(t) = A\cos(\omega_c t + k m(t)) \) |
(B) Phase Modulation | (II) \( x(t) = A\cos(\omega_c t + k \int m(t)dt) \) |
(C) Frequency Modulation | (III) \( x(t) = A + m(t)\cos(\omega_c t) \) |
(D) DSB-SC Modulation | (IV) \( x(t) = m(t)\cos(\omega_c t) \) |
Choose the correct answer:
Match List-I with List-II:
List-I (Electric field) | List-II (Mobility) |
---|---|
(A) Low electric field | (I) Mobility decreases by \( \frac{1}{E} \) |
(B) Medium electric field | (II) Mobility decreases by \( \frac{1}{\sqrt{E}} \) |
(C) High electric field | (III) Mobility remains constant |
Choose the correct answer: