List of top Electronics and Communication Engineering Questions asked in Andhra Pradesh Post Graduate Engineering Common Entrance Test

In the circuit shown in the following Figure, what is the output voltage (\( V_{out} \)) if a silicon transistor Q and an ideal op-amp are used?
output voltage (Vout) if a silicon transistor Q
Three identical amplifiers with each one having a voltage gain of 50, input resistance of 1 kΩ and output resistance of 250 Ω are cascaded. The open circuit voltage gain of the combined amplifier is
In Wien's bridge oscillator, if \( R_1 = R_2 \) and \( C_1 = C_2 \), then the typical values of open loop gain and feedback factor to obtain the sustained oscillations are
In the silicon BJT circuit shown below, assume that emitter area of transistor Q1 is half that of transistor Q2, then what is the value of the current \( I_o \) is approximately
silicon BJT circuit
If the input to a comparator is a sine wave, the output is
A negative going trigger pulse is applied to pin 2 of the IC 555 timer, passes through the threshold level of
Which of the following statements are true?
P: JFET is biased to operate it in active region
Q: MOSFET is biased to operate it in saturation region
The phenomenon known as "early effect" in a bipolar transistor refers to a reduction of the effective base width caused by
The DC current gain (\( \beta \)) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
A circuit that uses an amplifier with passive filter elements is called as a(n)
For an N-channel enhancement-type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e., VSB>0), the threshold voltage \( V_{th} \) of the MOSFET will
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
Let R denote the responsivity of a PIN photodetector and \(\lambda\) is the wavelength. Figure of merit for the photo detector is quantum efficiency. The expression for quantum efficiency \(\mu\) is given by
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
The early effect in a bipolar junction transistor is caused by
The direction of the diffusion current depends on
Match items in Group-I with items in Group-II, most suitably.
Spontaneous emission
How does a FET behave when the V-I characteristics are to the left of pinch off for an n-channel FET?
A silicon PN junction diode is forward biased with a constant current at room temperature carrying a constant current of 1 mA. When the temperature is increased by 10°C, the forward bias voltage across the PN junction is approximately equal to
In the circuit shown below, the Zener diode is ideal and Zener voltage is 6V. The output voltage \( V_o \) (in volts) is
Zener diode is ideal and Zener voltage is 6V
In MOSFET fabrication, the channel length is defined during the process of
In superposition theorem, when we consider the effect of one voltage source, all the other current sources are
The circuit shown in Figure is equivalent to a load of
Figureisequivalenttoaloadof
The current through a series RL circuit is \( \frac{1}{4} e^{-\frac{3}{4} t} \) when excited by a unit impulse voltage. The values of R and L are respectively
If \( E_p \) (Fermi energy level) \(>E_f \) (intrinsic Fermi energy level), then the type of semiconductor is