In a diode circuit, for the diode to be forward-biased, the P-end should be connected to a higher potential than the N-end. In option (4), the P-end of the diode is connected to the negative terminal of the power supply, while the N-end is connected to the positive terminal. This configuration causes the diode to be reverse-biased, as it is in opposition to the direction required for forward bias.
Thus the correct answer is option 4.
Match List-I with List-II:
List-I (Amplifiers) | List-II (Characteristics) |
---|---|
(A) CE Amplifier | (I) Current buffer circuit |
(B) CB Amplifier | (II) Voltage buffer circuit |
(C) CC Amplifier | (III) High current gain |
(D) Darlington Amplifier | (IV) High power gain |
Choose the correct answer:
Match List-I with List-II:
List-I (Effects) | List-II (Electronic Devices) |
---|---|
(A) Channel length modulation | (I) Zener diode |
(B) Channel width modulation | (II) BJTs |
(C) Early effect | (III) JFETs |
(D) Tunneling effect | (IV) MOSFETs |
Choose the correct answer:
Match List-I with List-II
List-I (Instructions) | List-II (Addressing Mode) |
---|---|
(A) LDA 2100 H | (I) Immediate |
(B) RAL | (II) Register |
(C) ADD C | (III) Direct |
(D) ANI 08 H | (IV) Implied |
Match List-I with List-II
List-I (Data Bus Status Output) | List-II (Status Signals) |
---|---|
(A) Memory read | (I) 0, 1, 1 |
(B) Op-code fetch | (II) 0, 1, 0 |
(C) INTR acknowledge | (III) 0, 0, 1 |
(D) Memory write | (IV) 1, 1, 1 |
Let \( S = \left\{ m \in \mathbb{Z} : A^m + A^m = 3I - A^{-6} \right\} \), where
\[ A = \begin{bmatrix} 2 & -1 \\ 1 & 0 \end{bmatrix} \]Then \( n(S) \) is equal to ______.