Question:
The barrier potential of a $p-n$ junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct?
The barrier potential of a $p-n$ junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct?
Updated On: Jul 13, 2024
- (1) and (2) only
- (2) only
- (2) and (3) only
- (1), (2) and (3)
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The Correct Option is D
Solution and Explanation
The barrier potential depends on type of semiconductor (For Si,$ V_b = 0.7 V and for Ge, V_b$ = 0.3 V), amount of doping and also on the temperature.
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.