Given below are two statements :
Statement I : In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II : In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.
Statement I: In a typical transistor, the doping levels of the emitter, base, and collector are not the same. The emitter is heavily doped, the base is lightly doped, and the collector is moderately doped. Therefore, Statement I is incorrect.
Statement II: In a transistor, the collector is the thickest because it needs to dissipate heat, and the base is the thinnest to allow efficient current flow. Therefore, Statement II is correct.
Thus, the correct answer is: Statement I is incorrect but Statement II is correct.

A metallic ring is uniformly charged as shown in the figure. AC and BD are two mutually perpendicular diameters. Electric field due to arc AB to O is ‘E’ magnitude. What would be the magnitude of electric field at ‘O’ due to arc ABC? 
Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R).
Assertion (A): Net dipole moment of a polar linear isotropic dielectric substance is not zero even in the absence of an external electric field. Reason
(R): In absence of an external electric field, the different permanent dipoles of a polar dielectric substance are oriented in random directions.
In the light of the above statements, choose the most appropriate answer from the options given below:
Two large plane parallel conducting plates are kept 10 cm apart as shown in figure. The potential difference between them is $ V $. The potential difference between the points A and B (shown in the figure) is: 
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.