Given below are two statements :
Statement I : In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II : In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.
Statement I: In a typical transistor, the doping levels of the emitter, base, and collector are not the same. The emitter is heavily doped, the base is lightly doped, and the collector is moderately doped. Therefore, Statement I is incorrect.
Statement II: In a transistor, the collector is the thickest because it needs to dissipate heat, and the base is the thinnest to allow efficient current flow. Therefore, Statement II is correct.
Thus, the correct answer is: Statement I is incorrect but Statement II is correct.
In the circuit shown, the identical transistors Q1 and Q2 are biased in the active region with \( \beta = 120 \). The Zener diode is in the breakdown region with \( V_Z = 5 \, V \) and \( I_Z = 25 \, mA \). If \( I_L = 12 \, mA \) and \( V_{EB1} = V_{EB2} = 0.7 \, V \), then the values of \( R_1 \) and \( R_2 \) (in \( k\Omega \), rounded off to one decimal place) are _________, respectively.

In the given figure, the blocks $A$, $B$ and $C$ weigh $4\,\text{kg}$, $6\,\text{kg}$ and $8\,\text{kg}$ respectively. The coefficient of sliding friction between any two surfaces is $0.5$. The force $\vec{F}$ required to slide the block $C$ with constant speed is ___ N.
(Given: $g = 10\,\text{m s}^{-2}$) 
Method used for separation of mixture of products (B and C) obtained in the following reaction is: 
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.