n: Light emitting diode $(LED)$ emits spontaneous radiation.
: $LED$ are forward biased p-n junctions.
- If both Assertion and Reason are true and the Reason is the correct explanation of the Assertion
- If both Assertion and Reason are true but the Reason is not the correct explanation of the Assertion
- If Assertion is true but Reason is false
- If both Assertion and Reason are false
The Correct Option is A
Solution and Explanation
Top Questions on P-N Junction
- Consider the following statements A and B and identify the correct answer:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (µA), is due to majority charge carriers.- NEET (UG) - 2024
- Physics
- P-N Junction
- A p-n junction diode is connected to a battery of emf 5.7 V in series with a resistor 5k \( \Omega \) such that it is forward biased. If the barrier potential of the diode is 0.7 V, neglecting the diode resistance, the current in the circuit is
- KCET - 2024
- Physics
- P-N Junction
- When a potential difference V is applied across a wire of resistance R, it dissipates energy at a rate W. If the wire is cut into two halves and these halves are connected mutually parallel across the same supply, the same supply, the energy dissipation rate will become:
- JEE Main - 2024
- Physics
- P-N Junction
- Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below- JEE Main - 2023
- Physics
- P-N Junction
Given below are two statements ; one is labelled as Assertion $A$ and the other is labelled as Reason $R$
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity
Reason R: For a p-n junction diode at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_2\right|>\pm V \geq\left|V_0\right|$ where $V_0$ is the threshold voltage and $V _2$ is the breakdown voltage
In the light of the above statements, choose the correct answer from the options given below
- JEE Main - 2023
- Physics
- P-N Junction
Questions Asked in AIIMS exam
Given below are two statements, one is labelled as Assertion A and the other is labelled as Reason R
Assertion (A) : 02 is liberated in the non-cyclic photophosphorylation.
Reason (R) : Liberation of oxygen is due to photolysis of water.
In the light of the above statements, choose the correct answer from the options given below
- AIIMS - 2019
- Photosynthesis in higher plants
- Which gas is present predominantly in biogas
- AIIMS - 2019
- Aerobic Respiration
- Match the following column I with column II.
- AIIMS - 2019
- cloning
Given below are two statements, one is labelled as Assertion A and the other is labelled as Reason R
Assertion (A) : The Cro-Magnon man was the direct ancestor of the living modern man.
Reason (R) : Cro-Magnon man had slightly prognathous face.
In the light of the above statements, choose the correct answer from the options given below
- AIIMS - 2019
- evolution
- Given below are two statements, one is labelled as Assertion A and the other is labelled as Reason R
Assertion: Orbit of a satellite is within the gravitational field of earth whereas escaping is beyond the gravitational field of earth.
Reason: Orbital velocity of a satellite is greater than its escape velocity.
In the light of the above statements, choose the correct answer from the options given below- AIIMS - 2019
- Gravitation
Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.