In a semiconductor, the intrinsic carrier concentration is \( 1.5 \times 10^{10} \, \text{cm}^{-3} \) at room temperature. If the energy band gap of the semiconductor is \( 1.1 \, \text{eV} \), calculate the intrinsic carrier concentration at a temperature of \( 500 \, \text{K} \). The intrinsic carrier concentration at room temperature (\( 300 \, \text{K} \)) is known to vary with temperature according to the relation:
\[
n_i(T) = n_{i0} \left( \frac{T}{T_0} \right)^{3/2} \exp \left( -\frac{E_g}{2k} \left( \frac{1}{T} - \frac{1}{T_0} \right) \right)
\]
Where:
- \( n_{i0} = 1.5 \times 10^{10} \, \text{cm}^{-3} \),
- \( T_0 = 300 \, \text{K} \),
- \( E_g = 1.1 \, \text{eV} \),
- \( k = 8.617 \times 10^{-5} \, \text{eV/K} \),
- \( T = 500 \, \text{K} \).