Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
In a semiconductor diode, the depletion layer is a region where mobile charge carriers are absent due to the recombination of electrons and holes. This layer forms at the junction between the p-type and n-type materials. The thickness of this depletion layer is not constant and varies depending on several factors.
Explanation:
The assertion states that in a semiconductor diode, the depletion layer's thickness is not fixed. This is true. The thickness of the depletion layer can change due to the biasing of the semiconductor. Biasing refers to applying voltage across the diode:
The reason given is that the thickness depends on various factors, such as biasing. This is true and explains the assertion since biasing directly affects how the depletion region forms and changes.
Therefore, the correct choice is: If both Assertion and Reason (R) are true and Reason (R) is the correct explanation of Assertion.
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
