Given below are two statements: One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A :n-p-n transistor permits more current than a p-n-p transistor.
Reason R: Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below:
Given below are two statements: One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A :n-p-n transistor permits more current than a p-n-p transistor.
Reason R: Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below:
- Both A and Rare true, and R is correct explanation of A.
- Both A and R are true but R is NOT the correct explanation of A.
- A is true but R is false.
- A is false but R is true.
The Correct Option is A
Solution and Explanation
The correct answer is (A) : Both A and Rare true, and R is correct explanation of A.
(A) is true as n-p-n transistor permits more current than p-n-p transistor as electrons which are majority charge carriers in n-p-n have higher mobility than holes which are majority carriers in
p-n-p transistor
Top Questions on Semiconductor electronics: materials, devices and simple circuits
- Consider a n-type semiconductor in which $ n_e $ and $ n_h $ are the number of electrons and holes, respectively.
- JEE Main - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- The range of electrical conductivity \( \sigma \) and resistivity \( \rho \) for metals, among the following, is:
- KCET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- The reverse saturation current (I0) of a silicon diode at 27°C is \( 10^{-6} \) A. What will be the approximate value of I0 at 67°C? (Assume \( I_0 \) doubles for every 10°C rise in temperature)
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a silicon semiconductor at room temperature, the intrinsic carrier concentration is \( 1.5 \times 10^{16} \, \text{m}^{-3} \). Calculate the energy band gap of the silicon if the intrinsic carrier concentration is given by: \[ n_i = \sqrt{N_c N_v} e^{-E_g / 2kT} \] Where: - \( N_c = 2.8 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the conduction band, - \( N_v = 1.04 \times 10^{25} \, \text{m}^{-3} \) is the effective density of states in the valence band, - \( k = 1.38 \times 10^{-23} \, \text{J/K} \) is the Boltzmann constant, - \( T = 300 \, \text{K} \) is the temperature.
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
- In a p-n junction diode, what happens to the width of the depletion region when the forward bias is increased?
- MHT CET - 2025
- Physics
- Semiconductor electronics: materials, devices and simple circuits
Questions Asked in JEE Main exam
0.5 g of an organic compound on combustion gave 1.46 g of $ CO_2 $ and 0.9 g of $ H_2O $. The percentage of carbon in the compound is ______ (Nearest integer) $\text{(Given : Molar mass (in g mol}^{-1}\text{ C : 12, H : 1, O : 16})$
- JEE Main - 2025
- Stoichiometry and Stoichiometric Calculations
Given: $ \Delta H_f^0 [C(graphite)] = 710 $ kJ mol⁻¹ $ \Delta_c H^0 = 414 $ kJ mol⁻¹ $ \Delta_{H-H}^0 = 436 $ kJ mol⁻¹ $ \Delta_{C-H}^0 = 611 $ kJ mol⁻¹
The \(\Delta H_{C=C}^0 \text{ for }CH_2=CH_2 \text{ is }\) _____\(\text{ kJ mol}^{-1} \text{ (nearest integer value)}\)- JEE Main - 2025
- Thermodynamics
Consider the following reactions $ A + HCl + H_2SO_4 \rightarrow CrO_2Cl_2$ + Side Products Little amount $ CrO_2Cl_2(vapour) + NaOH \rightarrow B + NaCl + H_2O $ $ B + H^+ \rightarrow C + H_2O $ The number of terminal 'O' present in the compound 'C' is ______
- JEE Main - 2025
- Inorganic chemistry
- Correct order of limiting molar conductivity for cations in water at 298 K is :
- JEE Main - 2025
- Electrochemistry
- 2 moles each of ethylene glycol and glucose are dissolved in 500 g of water. The boiling point of the resulting solution is: (Given: Ebullioscopic constant of water = $ 0.52 \, \text{K kg mol}^{-1} $)
- JEE Main - 2025
- Solutions
Concepts Used:
Semiconductors
Semiconductors are a crystalline solid materials, whose electrical conductivity lies between a conductor and an insulator. Semiconductors are mainly used in the manufacturing of electronic devices like capacitors, transistors, diodes, Integrated circuits, etc.
Properties of Semiconductor:
- Semiconductor acts like an insulator at Zero Kelvin. On increasing the temperature, it works as a conductor.
- Due to their exceptional electrical properties, semiconductors can be modified by doping to make semiconductor devices suitable for energy conversion, switches, and amplifiers.
- Lesser power losses.
Uses of Semiconductor:
- Semiconductors are widely used in manufacturing electronics devices like transistors, diodes, sensors, integrated circuits.
- Semiconductors are widely used in all electronic devices, like mobile phones, digital cameras, communication devices, trains, ATMs, etc.