Question:

Application of a forward bias to a $p-n$ junction

Updated On: Jul 2, 2022
  • increases the number of donors on the n-side
  • increases the electric field in the depletion zone
  • increases the potential difference across the depletion zone
  • widens the depletion zone
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The Correct Option is A

Solution and Explanation

When $p$-side of junction diode is connected to positive of battery and $n$-side to the negative, then junction diode is forward biased.
In this condition, more number of electrons enter in $n$-side from battery thereby increasing the number of donors on $n$-side.
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Concepts Used:

P-n Junction

A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.

Biasing conditions for the p-n Junction Diode:

in p-n junction diode two operating regions are there:

  • P-type
  • N-type

There are three biasing conditions for p-n junction diode are as follows:

  • Zero bias: When there is no external voltage applied to the p-n junction diode.
  • Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
  • Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.