The maximum power rating of the transistor can be expressed as the product of the collector current \( I_C \) and the collector-emitter voltage \( V_{CE} \), i.e.:
\(P_{\text{max}} = V_{CE} \times I_C \)
We are given the following values:
Now, we can rearrange the equation to solve for the maximum collector current \( I_C \):
\(I_C = \frac{P_{\text{max}}}{V_{CE}}\)
Substitute the given values into the equation:
\(I_C = \frac{0.250}{6} \approx 0.0417 \, \text{A} = 41.7 \, \text{mA}\)
Conclusion: The maximum collector current that the transistor can handle is \( 41.7 \, \text{mA} \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
In the following Venn diagram, which of the following represents the educated men but not urban?