A potential difference of \(2\,\text{V}\) is applied between the opposite faces of a Ge crystal plate of area \(1\,\text{cm}^2\) and thickness \(0.5\,\text{mm}\). If the concentration of electrons in Ge is \(2 \times 10^{19}\,\text{m}^{-3}\) and mobilities of electrons and holes are \(0.36\,\text{m}^2\text{V}^{-1}\text{s}^{-1}\) and \(0.14\,\text{m}^2\text{V}^{-1}\text{s}^{-1}\) respectively, then the current flowing through the plate will be: