Question

In a silicon sample doped with N-type impurities, the Fermi level $(E_F)$ is situated 0.35 eV away from the intrinsic Fermi level $(E_i)$. If the energy bandgap $(E_g)$ of silicon at 300 K is considered to be 1.10 eV, what is the separation between the Fermi level $(E_F)$ and the valence band edge $(E_v)$?

• A. 0.20 eV
• B. 0.30 eV
• C. 1.45 eV
• D. 0.90 eV

Answer 1

The Correct Option is D

The Correct answer is option (D) : 0.90 eV