A p--n junction has acceptor impurity concentration of \(10^{17}\,cm^{-3}\) in the p-side and donor impurity concentration of \(10^{16}\,cm^{-3}\) in the n-side. What is the contact potential at the junction (\(T=\) thermal energy, intrinsic semiconductor concentration \(n_i = 1.4\times 10^{10}\,cm^{-3}\)) ?