Question

Which of the following statements is correct for an n-type semiconductor?

• A. The donor energy level does not exist.
• B. The donor energy level lies just below the bottom of the conduction band.
• C. The donor energy level lies closely above the top of the valence band.
• D. The donor energy level lies at the halfway mark of the forbidden energy gap.

Hint:

In n-type semiconductors, the donor energy level is close to the conduction band, making it easier for electrons to move to the conduction band.

Answer 1

The Correct Option is D

In n-type semiconductors, the donor energy level is introduced just below the conduction band. This energy level provides electrons that can easily be excited into the conduction band, contributing to the increased conductivity of the semiconductor. The donor level lies just below the conduction band but above the valence band. Therefore, the correct statement is that the donor energy level lies at the halfway point of the forbidden energy gap. This corresponds to option (4).