In a p-n junction diode under forward bias, the charge carriers responsible for current flow in the external circuit are free electrons. These electrons are present in the n-type material, and they move towards the p-type material. The free electrons from the n-side travel through the external circuit to the p-side, where they recombine with holes. This flow of free electrons constitutes the current in the connecting wire.
In a forward-biased p-n junction diode, the electrons from the n-side and the holes from the p-side move toward the junction. However, in the external connecting wire, the current is due to the movement of \(\textbf{free electrons}\), as electrons are the actual charge carriers in metal conductors (wires). Holes contribute to current only within the semiconductor, not in the external circuit.
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
In the given circuit, the equivalent resistance between points A and D is: