The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The circuit shown in the figure contains two ideal diodes \( D_1 \) and \( D_2 \). If a cell of emf 3V and negligible internal resistance is connected as shown, then the current through \( 70 \, \Omega \) resistance (in amperes) is: 