The output Y of the logic circuit shown in figure is best represented as?
Show Hint
- \( A + BC \)
- \( A + \overline{BC} \)
- \( \overline{A + BC} \)
- \( A + \overline{B + C} \)
The Correct Option is D
Solution and Explanation
Top Questions on Semiconductors
- The intrinsic carrier concentration of a semiconductor is \( 2.5 \times 10^{16} \, /m^3 \) at 300 K. If the electron and hole mobilities are \( 0.15 \, {m}^2/{Vs} \) and \( 0.05 \, {m}^2/{Vs} \), respectively, then the intrinsic resistivity of the semiconductor (in \( k\Omega \cdot m \)) at 300 K is _________. (Charge of an electron \( e = 1.6 \times 10^{-19} \, C \))
- GATE EC - 2025
- Electronic Devices
- Semiconductors
- On doping, the conductivity of a semiconductor:
- PSEB XII - 2025
- Physics
- Semiconductors
- Two statements are given, one labelled Assertion (A) and the other labelled Reason (R). Select the correct answer from the codes (A), (B), (C), and (D) as given below.
Assertion (A): The impurities in p-type Si are not pentavalent atoms.
Reason (R): The hole density in the valence band in a p-type semiconductor is almost equal to the acceptor density.
- CBSE CLASS XII - 2025
- Physics
- Semiconductors
Extrinsic semiconductors are made by doping pure or intrinsic semiconductors with suitable impurity. There are two types of dopants used in doping, Si or Ge, and using them p-type and n-type semiconductors can be obtained. A p-n junction is the basic building block of many semiconductor devices. Two important processes occur during the formation of a p-n junction: diffusion and drift. When such a junction is formed, a ’depletion layer’ is created consisting of immobile ion-cores. This is responsible for a junction potential barrier. The width of a depletion layer and the height of potential barrier changes when a junction is forward-biased or reverse-biased. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for application of an external voltage. Using diodes, alternating voltages can be rectified.
- CBSE CLASS XII - 2025
- Physics
- Semiconductors
- A p-type Si semiconductor is made by doping an average of one dopant atom per \( 5 \times 10^7 \) silicon atoms. If the number density of silicon atoms in the specimen is \( 5 \times 10^{28} \, \text{atoms m}^{-3} \), find the number of holes created per cubic centimeter in the specimen due to doping. Also give one example of such dopants.
- CBSE CLASS XII - 2025
- Physics
- Semiconductors
Questions Asked in VITEEE exam
- Find the value of \( x \) in the following equation: \[ \frac{2}{x} + \frac{3}{x + 1} = 1 \]
- VITEEE - 2025
- Algebra
- How many numbers between 0 and 9 look the same when observed in a mirror?
- VITEEE - 2025
- Odd one Out
- In a code language, 'TIGER' is written as 'JUISF'. How will 'EQUAL' be written in that language?
- VITEEE - 2025
- Odd one Out
- In a code language, 'TIGER' is written as 'JUISF'. How will 'EQUAL' be written in that language?
- VITEEE - 2025
- Data Interpretation
- TUV : VYB :: PRA : ?
- VITEEE - 2025
- Odd one Out