Question:
Potential barrier developed in a junction diode opposes the flow of
Potential barrier developed in a junction diode opposes the flow of
Updated On: Jul 6, 2022
- minority carrier in both regions only
- majority carriers only
- electrons in $p$ region
- holes in $p$ region
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The Correct Option is B
Solution and Explanation
Potential barrier developed in a junction diode opposes the flow of majority carriers only.
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Concepts Used:
P-n Junction
A P-N junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor.
Biasing conditions for the p-n Junction Diode:
in p-n junction diode two operating regions are there:
- P-type
- N-type
There are three biasing conditions for p-n junction diode are as follows:
- Zero bias: When there is no external voltage applied to the p-n junction diode.
- Forward bias: P-type is connected to positive terminal of the voltage potential while n-type is connected to the negative terminal.
- Reverse bias: P-type is connected to negative terminal of the voltage potential while n-type is connected to the positive terminal.