For the transistor M1 in the circuit shown in the figure, \( \mu_n C_{\text{ox}} = 100 \, \mu \text{A/V}^2 \) and \( \frac{W}{L} = 10 \), where \( \mu_n \) is the mobility of electrons, \( C_{\text{ox}} \) is the oxide capacitance per unit area, \( W \) is the width, and \( L \) is the length. The channel length modulation coefficient is ignored. If the gate-to-source voltage \( V_{GS} \) is 1 V to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is _________ V.
