



A diode is reverse biased when the potential at the cathode (n-side) is higher than the potential at the anode (p-side).
(1) The potential at the anode is -12V, and the potential at the cathode is -5V. Since -12V<-5V, the diode is forward biased.
(2) The potential at the anode is 0V, and the potential at the cathode is -10V. Since 0V>-10V, the diode is forward biased.
(3) The potential at the anode is 0V, and the potential at the cathode is +5V. Since 0V<+5V, the diode is reverse biased.
(4) The potential at the anode is +5V, and the potential at the cathode is +10V. Since +5V<+10V, the diode is forward biased. Therefore, the diode in option (3) is reverse biased.
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.

Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
Match the following physical quantities with their respective dimensional formulas.

