Question

In a p-n junction diode, reverse biasing

• A. increases the number of majority charge carriers
• B. decreases the number of minority charge carriers
• C. increases the potential barrier
• D. decreases the potential barrier
• E. increases the number of both majority and minority charge carriers

Hint:

Always remember that reverse biasing in diodes increases the depletion region and potential barrier, contrary to forward biasing which reduces both.

Answer 1

The Correct Option is C

Step 1: Reverse biasing a p-n junction diode involves connecting the p-type material to the negative terminal and the n-type material to the positive terminal of an external voltage source. 
Step 2: This external reverse bias increases the width of the depletion zone as it adds to the built-in potential across the junction. 
Step 3: The increased depletion zone leads to a higher potential barrier, which impedes the flow of majority carriers across the junction, effectively increasing the resistance of the diode to current flow. 
Step 4: Therefore, reverse biasing increases the potential barrier, aligning with option (C).