In an unbiased semiconductor diode, the depletion region is formed where the free electrons and holes recombine, resulting in a region with no free charge carriers. This is a key characteristic of the depletion region in a p-n junction diode.
At room temperature, the energy band gap of different materials have been listed in the table below. Correctly match the energy band gap (List-I) with the corresponding material (List-II).
LIST-I (Energy band gap) | LIST-II (Material) |
---|---|
A. \( E_g = 0.67 \) eV | I. Polymer |
B. \( E_g = 1.1 \) eV | II. Germanium |
C. \( E_g = 1.43 \) eV | III. Silicon |
D. \( E_g > 5 \) eV | IV. Gallium Arsenide |