The wavelength of light emitted from an LED is related to its energy gap by the formula:
\( \lambda = \frac{1240}{E_g} \),
where:
Substitute \( E_g = 1.42 \, \text{eV} \):
\( \lambda = \frac{1240}{1.42} \).
Perform the calculation: \( \lambda = 875 \, \text{nm} \, \text{(approximately)}. \)
Final Answer: 875 nm.
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
Assertion : In a semiconductor diode, the thickness of the depletion layer is not fixed.
Reason (R): Thickness of depletion layer in a semiconductor device depends upon many factors such as biasing of the semiconductor.
The largest $ n \in \mathbb{N} $ such that $ 3^n $ divides 50! is:
Let \[ I(x) = \int \frac{dx}{(x-11)^{\frac{11}{13}} (x+15)^{\frac{15}{13}}} \] If \[ I(37) - I(24) = \frac{1}{4} \left( b^{\frac{1}{13}} - c^{\frac{1}{13}} \right) \] where \( b, c \in \mathbb{N} \), then \[ 3(b + c) \] is equal to: