Let the mass of the balloon be \( m = 60 \, {g} = 0.06 \, {kg} \).
When the balloon is moving upward with an acceleration of \( 4 \, {m/s}^2 \), the net force on the balloon is given by Newton’s second law: \[ F_{{net}} = m a \] where: - \( m = 0.06 \, {kg} \) is the mass of the balloon - \( a = 4 \, {m/s}^2 \) is the upward acceleration.
The upward force is: \[ F_{{up}} = m(g + a) = 0.06 \times (10 + 4) = 0.06 \times 14 = 0.84 \, {N} \] Now, to make the balloon move downward with the same acceleration, we need to add a mass to it, and the net force should be in the downward direction. For the downward motion, the net force is: \[ F_{{net}} = (m + M) \times a \] where \( M \) is the additional mass to be added. The downward force needed to get the balloon to descend with the same acceleration is equal to the force required to accelerate the added mass: \[ (m + M)(g - a) = F_{{up}} \quad \Rightarrow \quad (0.06 + M)(10 - 4) = 0.84 \] \[ (0.06 + M)(6) = 0.84 \] \[ 0.06 + M = \frac{0.84}{6} = 0.14 \] \[ M = 0.14 - 0.06 = 0.08 \, {kg} = 80 \, {g} \] Thus, the mass to be added to the balloon to make it descend with the same acceleration is \( 80 \, {g} \). \[ \boxed{80 \, {g}} \]
Assertion (A): We cannot form a p-n junction diode by taking a slab of a p-type semiconductor and physically joining it to another slab of an n-type semiconductor.
Reason (R): In a p-type semiconductor, \( n_e \gg n_h \) while in an n-type semiconductor \( n_h \gg n_e \).
The graph shows the variation of current with voltage for a p-n junction diode. Estimate the dynamic resistance of the diode at \( V = -0.6 \) V.
