List of top Questions asked in Andhra Pradesh Post Graduate Engineering Common Entrance Test

In the silicon BJT circuit shown below, assume that emitter area of transistor Q1 is half that of transistor Q2, then what is the value of the current \( I_o \) is approximately
silicon BJT circuit
In Wien's bridge oscillator, if \( R_1 = R_2 \) and \( C_1 = C_2 \), then the typical values of open loop gain and feedback factor to obtain the sustained oscillations are
Let R denote the responsivity of a PIN photodetector and \(\lambda\) is the wavelength. Figure of merit for the photo detector is quantum efficiency. The expression for quantum efficiency \(\mu\) is given by
For an N-channel enhancement-type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e., VSB>0), the threshold voltage \( V_{th} \) of the MOSFET will
A circuit that uses an amplifier with passive filter elements is called as a(n)
The DC current gain (\( \beta \)) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is
The phenomenon known as "early effect" in a bipolar transistor refers to a reduction of the effective base width caused by
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
The early effect in a bipolar junction transistor is caused by
Match items in Group-I with items in Group-II, most suitably.
Spontaneous emission
A silicon PN junction diode is forward biased with a constant current at room temperature carrying a constant current of 1 mA. When the temperature is increased by 10°C, the forward bias voltage across the PN junction is approximately equal to
How does a FET behave when the V-I characteristics are to the left of pinch off for an n-channel FET?
The direction of the diffusion current depends on
The current through a series RL circuit is \( \frac{1}{4} e^{-\frac{3}{4} t} \) when excited by a unit impulse voltage. The values of R and L are respectively
If \( E_p \) (Fermi energy level) \(>E_f \) (intrinsic Fermi energy level), then the type of semiconductor is
In MOSFET fabrication, the channel length is defined during the process of
In superposition theorem, when we consider the effect of one voltage source, all the other current sources are
In the circuit shown below, the Zener diode is ideal and Zener voltage is 6V. The output voltage \( V_o \) (in volts) is
Zener diode is ideal and Zener voltage is 6V
Which process of the Electron-hole pair is responsible for emitting of light?
The 2-port admittance matrix of the circuit shown is given by
2-port admittance matrix
The current waveform \(i(t)\) in a pure resistor of 20 \( \Omega \) is as shown in the figure below, then the power dissipated in the resistor is
waveform i(t) in a pure resistor of 20 Ω
If there are 5 branches and 4 nodes in the graph, then the number of mesh equations that can be formed are?
The mesh current method
(I) Works with both planar and non-planar circuits
(II) Uses Kirchhoff’s voltage law
Which of the above is correct?
Among the four networks, N1, N2, N3, and N4, given in the following figure, the networks having identical driving point function are
four networks, N1, N2, N3, and N4,